Application in polishing agents

In the mid-1960s, mechanical polishing was mostly used for polishing semiconductor substrates, resulting in extremely severe damage to the mirror surface. After SiO2 sol and gel polishing was proposed in 1965, chemical mechanical polishing (CMP) I technology represented by SiO2 gradually replaced traditional mechanical polishing. Since 1996, with the development of the electronics industry, the demand for silica sol as a raw material for silicon wafer polishing solution has surged. The so-called polishing agent is composed of SiO2 powder, water, dispersion stabilizer, wetting regulator, pH regulator, and surface treatment agent. The mass fraction of SiO2 can reach up to 60%, and the viscosity of the product is less than 0.1Pa. S, with a gravity settling performance of over 1a. It is an excellent polishing material for CMP technology, which can be used for rough and fine polishing of silicon wafers, as well as IC processing. It is particularly suitable for planarization processing of multi-layer thin films in large-scale integrated circuits, and can also be used for post-processing CMP cleaning of semiconductor devices, flat displays, polycrystalline modules, micro motor systems, optical cameras, etc.